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Gallium nitride (GaN) brings high-frequency and power equipment into an unrealized new field. Compared with silicon, GaN crystal has stronger chemical bonds, so it can withstand several times higher electric field than silicon devices without collapse.
This means that we can shorten the distance between the electrical terminals of transistors by ten times. This makes the electronic resistance loss lower and the switching time (high frequency) shorter.
Generally speaking, GaN devices have better physical and chemical characteristics. At the same time, they have the characteristics of fast switching speed, small volume, and high efficiency. Therefore, GaN materials are widely used in the production of high temperature, high frequency, high power and radiation resistant electronic devices.
GaN based power devices have the following six characteristics: 1) low conduction loss and low impedance; 2) fast switching speed and low loss; 3) low capacitance and small charge-discharge loss; 4) low energy consumption; 5) smaller and lighter; 6) lower thermal resistance in high output current and power density environment.
GaN is a semiconductor material with a wide band gap of 3.40 eV. The width of the forbidden band determines the difficulty of electronic transition and is one of the determinants of the conductivity of semiconductors.
The wider the band gap, the closer the semiconductor material is to the insulator, and the stronger the stability of the device. Therefore, ultra-wide band gap semiconductors can be used in special environments such as high temperature, high power, high frequency and radiation resistance.
GaN has a high electron saturation rate, which is 2.5 times that of silicon and 2 times that of gallium arsenide. At the same time, GaN has the characteristics of high critical magnetic field and high electron mobility. It is also the best choice for UHF (ultra-high frequency), power devices or equipment.
In addition, the group III nitride family (such as InN, GaN, AlN, etc.), direct band gap, are all luminescent materials. The group III nitride family can adjust the band gap from 0.7 eV of indium nitride (inN) to 3.4 eV of GaN and then to 6.2 eV of AlN. They form a complete series of ternary alloys that span the entire visible spectrum and extend from the IR (infrared) region ~1700 nm to the DUV (deep ultraviolet) region ~200 nm.
Mivium Gen3+ Semiconductors
As a material science company aimed at sustainability, we’ve got distinctive technological approaches to deliver the next generation of semiconductors. Specifically the Mivium Gen3+ semiconductors are ethically manufactured without any pollution, non-toxic, with superior quality and particle uniformity.
Gallium Nitride (GaN) particle
GaN particles are the most upstream and source products of GaN series products. The high-purity and mass production of GaN particles has a far-reaching impact on downstream products and is of great significance.
Gallium Nitride (GaN) substrate
Substrate is the basis of IC chip production. Using Mivium's proprietary & protected technology, gallium is broken into a large number of molten ultrafine droplets without solvent.