Gallium nitride (GaN) brings high-frequency and power equipment into an unrealized new field. Compared with silicon, GaN crystal has stronger chemical bonds, so it can withstand several times higher electric field than silicon devices without collapse. This means that we can shorten the distance between the electrical terminals of transistors by ten times. This makes the electronic resistance loss lower and the switching time (high frequency) shorter. Generally speaking, GaN devices have better physical and chemical characteristics. At the same time, they have the characteristics of fast switching speed, small volume, and high efficiency. Therefore, GaN materials are widely used in the production of high temperature, high frequency, high power and radiation resistant electronic devices.
GaN based power devices have the following six characteristics: 1) low conduction loss and low impedance; 2) fast switching speed and low loss; 3) low capacitance and small charge-discharge loss; 4) low energy consumption; 5) smaller and lighter; 6) lower thermal resistance in high output current and power density environment.
GaN is a semiconductor material with a wide band gap of 3.40 eV. The width of the forbidden band determines the difficulty of electronic transition and is one of the determinants of the conductivity of semiconductors. The wider the band gap, the closer the semiconductor material is to the insulator, and the stronger the stability of the device. Therefore, ultra-wide band gap semiconductors can be used in special environments such as high temperature, high power, high frequency and radiation resistance. GaN has a high electron saturation rate, which is 2.5 times that of silicon and 2 times that of gallium arsenide. At the same time, GaN has the characteristics of high critical magnetic field and high electron mobility. It is also the best choice for UHF (ultra-high frequency), power devices or equipment.
In addition, the group III nitride family (such as InN, GaN, AlN, etc.), direct band gap, are all luminescent materials. The group III nitride family can adjust the band gap from 0.7 eV of indium nitride (inN) to 3.4 eV of GaN and then to 6.2 eV of AlN. They form a complete series of ternary alloys that span the entire visible spectrum and extend from the IR (infrared) region ~1700 nm to the DUV (deep ultraviolet) region ~200 nm.
From 2018 to 2020, the average annual compound growth rate of the global GaN devices market was 29.3%; Optoelectronic devices and RF devices are the main market segments of GaN; communication, automobile, electric power and other industries are the main downstream markets of GaN. It can be seen from the development of GaN industry that the global nitride semiconductor industry has a strong development momentum.

Mivium Gen3+ Semiconductors

As a material science company aimed at sustainability, we’ve got distinctive technological approaches to deliver the next generation of semiconductors. Specifically the Mivium Gen3+ semiconductors are ethically manufactured without any pollution, non-toxic, with superior quality and particle uniformity.

Gallium Nitride (GaN) particle

GaN particles are the most upstream and source products of GaN series products. The high-purity and mass production of GaN particles has a far-reaching impact on downstream products and is of great significance. GaN particles are one of the best precursors for the preparation of GaN single crystal substrates. Compared with other precursors, the dislocation rate of GaN single crystal substrate is reduced by at least two orders by Ammonothermal (AM). Using GaN particles, high-end luminescent phosphors are prepared, and their luminous efficiency / intensity is hundreds of times higher than that of traditional phosphors. Mivium 3N GaN Particle (99.9% gallium nitride particles) Mivium 4N GaN Particle (99.99% gallium nitride particles) Mivium 5N GaN Particle (99.999% gallium nitride particles)

Gallium Nitride (GaN) substrate

Substrate is the basis of IC chip production. Using Mivium's patented technology, gallium is broken into a large number of molten ultrafine droplets without solvent. The molten gallium droplets with high purity are introduced into the epitaxial growth chamber and gradually grow to become large-size GaN single crystal blocks. The GaN single crystal blocks are cut and polished into GaN substrates or wafers. Mivium 4inch GaN Substrate (100mm single crystal substrate, ≥450 μm thickness, dislocation: <1x10⁵) Mivium 6inch GaN Substrate (150mm single crystal substrate, ≥500 μm thickness, dislocation: <1x10⁵) Mivium 8inch GaN Substrate (200mm single crystal substrate, ≥500 μm thickness, dislocation: <1x10⁵)

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Issued on method and equipment: particle and single crystal substrate.

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